NPN bipolar junction transistor (BJT) in a SOT-23-3 package, designed for general-purpose applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with operating temperatures ranging from -55°C to 150°C. This RoHS and Halogen Free component is supplied in tape and reel packaging.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
| RoHS | Compliant |
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Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
