NPN bipolar junction transistor (BJT) in a SOT-23-3 package, designed for general-purpose applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with operating temperatures ranging from -55°C to 150°C. This RoHS and Halogen Free component is supplied in tape and reel packaging.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi BC817-40LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
250
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC817-40LT3G Datasheet
Download the complete datasheet for Onsemi BC817-40LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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