NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 25V, maximum collector current of 500mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 250 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
Quick Jump:
Technical Specifications
Onsemi BC818-40LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
1.11mm
hFE Min
250
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
25V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC818-40LT1G Datasheet
Download the complete datasheet for Onsemi BC818-40LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
