NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package, featuring a 65V collector-emitter breakdown voltage and a 100mA maximum collector current. This component offers a minimum hFE of 110 and a transition frequency of 100MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. Packaged on a 10000-reel tape and reel, it is RoHS compliant and halogen-free.
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Onsemi BC846ALT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 65V |
| Width | 1.4mm |
| RoHS | Compliant |
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