NPN Epitaxial Silicon Transistor, SOT-23 package, 300MHz transition frequency. Features 65V collector-emitter breakdown voltage, 100mA max collector current, and 200mV collector-emitter saturation voltage. Offers a minimum hFE of 110 and a maximum power dissipation of 310mW. Designed for surface mount applications, this RoHS compliant component operates from -65°C to 150°C.
Frequency300MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Onsemi BC846AMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
hFE Min
110
Lead Free
Lead Free
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
310mW
Radiation Hardening
No
RoHS Compliant
Yes
Series
BC846
Transition Frequency
300MHz
DC Rated Voltage
65V
Weight
0.03g
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846AMTF Datasheet
Download the complete datasheet for Onsemi BC846AMTF to view detailed technical specifications.
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