NPN Bipolar Junction Transistor in a SOT-23-3 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a power dissipation of 300mW. Operates with a minimum gain (hFE) of 200 and a transition frequency of 100MHz. Packaged on a 10000-piece tape and reel, this component is RoHS compliant and halogen-free.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi BC846BLT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.037inch
hFE Min
200
Lead Free
Lead Free
Length
0.119inch
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
65V
Width
0.055inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846BLT3G Datasheet
Download the complete datasheet for Onsemi BC846BLT3G to view detailed technical specifications.
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