NPN Epitaxial Silicon Transistor for surface mount applications in a SOT-23 package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 65V. Offers a transition frequency of 300MHz and a minimum hFE of 110. Operates across a temperature range of -65°C to 150°C with a power dissipation of 310mW.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BC846BMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Height
0.93mm
hFE Min
110
Length
2.92mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
No
Transition Frequency
300MHz
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846BMTF Datasheet
Download the complete datasheet for Onsemi BC846BMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
