NPN/PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features include a 65V Collector-Emitter Voltage (VCEO), 100mA maximum collector current, and a 100MHz transition frequency. This device offers a minimum hFE of 150 and a maximum power dissipation of 380mW. It operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS and Halogen Free compliant.
Frequency100MHz
PackageSOT-363-6
Current Rating100mA
PolarityNPN, PNP
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Technical Specifications
Onsemi BC846BPDW1T1G technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.039inch
hFE Min
150
Lead Free
Lead Free
Length
0.086inch
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
380mW
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
380mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
65V
Width
0.053inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BC846BPDW1T1G Datasheet
Download the complete datasheet for Onsemi BC846BPDW1T1G to view detailed technical specifications.
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