Dual NPN Bipolar Transistor in a SOT-363-6 package. Features a collector-emitter voltage of 45V, collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum hFE of 200 and a maximum power dissipation of 380mW. Operates across a temperature range of -55°C to 150°C. Packaged in a 10000-unit tape and reel. RoHS and Halogen Free compliant.
Frequency100MHz
PackageSOT-363-6
Current Rating100mA
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BC847BDW1T3G technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.039inch
hFE Min
200
Lead Free
Lead Free
Length
0.086inch
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
380mW
Number of Elements
2
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
380mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Width
0.053inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BC847BDW1T3G Datasheet
Download the complete datasheet for Onsemi BC847BDW1T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
