NPN Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
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Onsemi BC847BLT1 technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| RoHS | Not Compliant |
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