Co-packaged NPN and PNP bipolar junction transistor with a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Features a 100MHz transition frequency and 150 minimum hFE. Housed in a compact SOT-363-6 package with Tin, Matte contact plating, this RoHS and Lead Free component offers a wide operating temperature range from -55°C to 150°C. Ideal for surface mount applications, it is supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-363-6
Current Rating1A
PolarityNPN, PNP
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Technical Specifications
Onsemi BC847BPDW1T1G technical specifications.
General
Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.9mm
hFE Min
150
Lead Free
Lead Free
Length
2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
380mW
Number of Elements
2
Output Voltage
5V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
380mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
100MHz
DC Rated Voltage
45V
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC847BPDW1T1G Datasheet
Download the complete datasheet for Onsemi BC847BPDW1T1G to view detailed technical specifications.
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