NPN bipolar junction transistor (BJT) featuring a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. This general-purpose transistor offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. It is housed in a compact 3-pin SC-70 package with matte tin plating, designed for tape and reel packaging. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 150mW.
Frequency100MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC847CWT1G technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.9mm
hFE Min
270
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
45V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC847CWT1G Datasheet
Download the complete datasheet for Onsemi BC847CWT1G to view detailed technical specifications.
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