
NPN bipolar junction transistor (BJT) featuring a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. This general-purpose transistor offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. It is housed in a compact 3-pin SC-70 package with matte tin plating, designed for tape and reel packaging. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 150mW.
Sign in to ask questions about the Onsemi BC847CWT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC847CWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC847CWT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
