NPN bipolar junction transistor (BJT) featuring a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. This general-purpose transistor offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. It is housed in a compact 3-pin SC-70 package with matte tin plating, designed for tape and reel packaging. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 150mW.
Frequency100MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC847CWT1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.9mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC847CWT1G Datasheet
Download the complete datasheet for Onsemi BC847CWT1G to view detailed technical specifications.
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