NPN bipolar junction transistor (BJT) in a SOT-23-3 package, featuring a 30V collector-emitter breakdown voltage and a 100mA maximum collector current. This component offers a 300mW power dissipation and a 100MHz transition frequency. Key specifications include a minimum hFE of 420 and a collector-emitter saturation voltage of 600mV. The transistor operates within a temperature range of -55°C to 150°C and is supplied in tape and reel packaging.
Frequency100MHz
PackageSOT-23-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC848CLT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC848CLT1G Datasheet
Download the complete datasheet for Onsemi BC848CLT1G to view detailed technical specifications.
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