NPN bipolar junction transistor in a compact SC-70 (SOT-323) 3-lead package. Features a maximum collector-emitter voltage of 30V, a continuous collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 270 and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C, with tin-matte contact plating and lead-free, RoHS-compliant construction. Supplied on a 3000-piece tape and reel.
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Onsemi BC848CWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Width | 1.35mm |
| RoHS | Compliant |
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