NPN bipolar junction transistor in a compact SC-70 (SOT-323) 3-lead package. Features a maximum collector-emitter voltage of 30V, a continuous collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 270 and a maximum power dissipation of 150mW. Operates across a temperature range of -55°C to 150°C, with tin-matte contact plating and lead-free, RoHS-compliant construction. Supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSC
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi BC848CWT1G technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.9mm
hFE Min
270
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
30V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC848CWT1G Datasheet
Download the complete datasheet for Onsemi BC848CWT1G to view detailed technical specifications.
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