
NPN bipolar junction transistor in SOT-23 package for surface mount applications. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 310mW. Lead-free and RoHS compliant with tin matte contact plating.
Onsemi BC849BMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 310mW |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC849BMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
