PNP Epitaxial Silicon Transistor, SOT-23 package, designed for surface mount applications. Features a collector-emitter breakdown voltage of 65V, a maximum collector current of 100mA, and a transition frequency of 150MHz. Offers a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 310mW. Operates within a temperature range of -65°C to 150°C. Supplied on a 3000-piece tape and reel.
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Onsemi BC856AMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Series | BC856 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -65V |
| Weight | 0.03g |
| RoHS | Not Compliant |
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