PNP Bipolar Junction Transistor in a compact SOT-723-3 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 100MHz. This device boasts a minimum hFE of 150 and a maximum power dissipation of 640mW. Supplied on an 8000-piece tape and reel, it is RoHS and Halogen Free compliant.
Frequency100MHz
PackageSOT-723-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC856BM3T5G technical specifications.
General
Package/Case
SOT-723-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.55mm
hFE Min
150
Lead Free
Lead Free
Length
1.25mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
265mW
Number of Elements
1
Package Quantity
8000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
640mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-65V
Width
0.85mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856BM3T5G Datasheet
Download the complete datasheet for Onsemi BC856BM3T5G to view detailed technical specifications.
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