PNP Epitaxial Silicon Transistor, 3000-REEL, featuring a 65V Collector Emitter Voltage (VCEO) and -100mA Max Collector Current. This surface mount component offers a 150MHz transition frequency and a minimum hFE of 110. Packaged in SOT-23 with matte tin plating, it operates from -65°C to 150°C with 310mW power dissipation. RoHS compliant and lead-free.
Frequency150MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi BC856BMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
0.97mm
hFE Min
110
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-65V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC856BMTF Datasheet
Download the complete datasheet for Onsemi BC856BMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
