PNP Bipolar Junction Transistor (BJT) with a 45V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Features a 100MHz transition frequency and a minimum hFE of 220. Housed in a 6-pin SOT-363-6 package, this component offers a maximum power dissipation of 380mW and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-363-6
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC857BDW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 380mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC857BDW1T1G Datasheet
Download the complete datasheet for Onsemi BC857BDW1T1G to view detailed technical specifications.
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