
PNP Bipolar Junction Transistor (BJT) in a compact SOT-416 (SC-75) 3-lead package. Features a maximum collector current of 100mA and a collector-emitter voltage of 45V. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C. Supplied on a 3000-piece tape and reel, this RoHS compliant component is ideal for various electronic applications.
Onsemi BC857BTT1G technical specifications.
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Width | 0.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC857BTT1G to view detailed technical specifications.
No datasheet is available for this part.
