The BC857BWT1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a SC-70, 3-pin package and is not RoHS compliant due to the presence of lead.
Sign in to ask questions about the Onsemi BC857BWT1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC857BWT1 technical specifications.
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 150 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC857BWT1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
