PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a -50V Collector Base Voltage (VCBO) and 45V Collector Emitter Breakdown Voltage (VCEO). Offers a maximum collector current of 200mA and a transition frequency of 200MHz. Packaged in a surface-mount SC case with tin, matte contact plating. Operates within a temperature range of -55°C to 150°C.
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Onsemi BC857S technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Height | 1mm |
| hFE Min | 125 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 200mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -45V |
| Weight | 0.028g |
| Width | 1.25mm |
| RoHS | Compliant |
No datasheet is available for this part.
