
PNP Epitaxial Silicon Transistor, SOT-23 package, designed for surface mount applications. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C, with a power dissipation of 310mW. Packaged in a 3000-piece tape and reel.
Sign in to ask questions about the Onsemi BC858AMTF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC858AMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 310mW |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC858AMTF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
