The BC858AWT1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a gain bandwidth product of 100MHz. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a surface mount SC-70 package and is available in quantities of 3000 units per reel. The device is not RoHS compliant and contains lead.
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Onsemi BC858AWT1 technical specifications.
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 90 |
| Lead Free | Contains Lead |
| Max Collector Current | 15nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| RoHS | Not Compliant |
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