PNP Bipolar Junction Transistor featuring a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This component offers a minimum DC current gain (hFE) of 90 and a transition frequency of 100MHz. Packaged in an SC-70 (SOT-323) 3-lead surface-mount package, it operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS compliant and lead-free.
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Onsemi BC858AWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BC858AW |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
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