PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 100mA Max Collector Current. Offers a 100MHz Gain Bandwidth Product and a minimum hFE of 220. Operates across a temperature range of -55°C to 150°C with 300mW power dissipation. Packaged in a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi BC858BLT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.94mm
hFE Min
220
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC858BLT1G Datasheet
Download the complete datasheet for Onsemi BC858BLT1G to view detailed technical specifications.
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