PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 100mA Max Collector Current. Offers a 100MHz Gain Bandwidth Product and a minimum hFE of 220. Operates across a temperature range of -55°C to 150°C with 300mW power dissipation. Packaged in a 3000-piece tape and reel.
Sign in to ask questions about the Onsemi BC858BLT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC858BLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC858BLT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
