PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged in a 10000-unit tape and reel, this component is lead-free and RoHS compliant.
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Onsemi BC858BLT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
| RoHS | Compliant |
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