PNP Bipolar Junction Transistor (BJT) in an SC-70 (SOT-323) 3-lead package. Features a maximum collector-emitter voltage (VCEO) of 30V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 150 and a gain bandwidth product of 100MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 150mW. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
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Onsemi BC858BWT1G technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | -30V |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.9mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BC858BW |
| DC Rated Voltage | -30V |
| Width | 1.35mm |
| RoHS | Compliant |
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