The BC858CDW1T1 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. It has a maximum power dissipation of 380mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a surface mount package and is available in quantities of 3000 per reel.
Onsemi BC858CDW1T1 technical specifications.
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 420 |
| Lead Free | Contains Lead |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| RoHS | Not Compliant |
No datasheet is available for this part.
