
PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 SMD/SMT package. Features a 30V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Offers a 300mW power dissipation and a transition frequency of 100MHz. Includes a minimum hFE of 420 and a Collector-Emitter Saturation Voltage of -650mV. RoHS compliant with tin, matte contact plating.
Onsemi BC858CLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.94mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC858CLT1G to view detailed technical specifications.
No datasheet is available for this part.
