The BC859BLT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a gain bandwidth product of 100MHz. It has a maximum collector current rating of 15nA and a maximum power dissipation of 300mW. The transistor is packaged in a SOT-23-3 surface mount package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
Onsemi BC859BLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Max Collector Current | 15nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
No datasheet is available for this part.
