PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 surface mount package. Features a 30V Collector-Emitter Voltage (VCEO) and a 30V Collector Base Voltage (VCBO). Offers a maximum collector current of -100mA and a minimum DC current gain (hFE) of 420. Operates with a transition frequency of 100MHz and a maximum power dissipation of 300mW. Supplied on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
Sign in to ask questions about the Onsemi BC859CLT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC859CLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Max Collector Current | 15nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC859CLT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
