NPN bipolar junction transistor in a SOT-223 surface mount package. Features a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C, with tin-matte contact plating and lead-free construction. Packaged on a 4000-piece tape and reel.
PackageSOT-223
Current Rating1.2A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi BCP56 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
50V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1.2A
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
hFE Min
40
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
80V
Max Collector Current
1.2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
80V
Weight
0.188g
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCP56 Datasheet
Download the complete datasheet for Onsemi BCP56 to view detailed technical specifications.
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