
NPN bipolar junction transistor in a SOT-223 surface mount package. Features a maximum collector current of 1.2A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C, with tin-matte contact plating and lead-free construction. Packaged on a 4000-piece tape and reel.
Onsemi BCP56 technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.6mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 0.188g |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BCP56 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
