NPN Silicon Power Transistor, TO-261AA package (SOT-223-4) with 4 pins. Features 80V collector-emitter breakdown voltage and 1A maximum collector current. Offers 100V collector-base voltage and 5V emitter-base voltage. Exhibits a minimum DC current gain (hFE) of 25 and a transition frequency of 130MHz. Maximum power dissipation is 1.5W, with operating temperatures from -65°C to 150°C.
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Onsemi BCP56-16T1 technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Lead |
| Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 25 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 130MHz |
| Voltage | 80V |
| DC Rated Voltage | 80V |
| RoHS | Not Compliant |
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