NPN Bipolar Junction Transistor (BJT) with a 1A maximum collector current and 80V collector-emitter breakdown voltage. Features a gain bandwidth product of 130MHz and a maximum power dissipation of 1.5W. Packaged in a SOT-223-4 (TO-261) surface-mount case with tin, matte plating. Operates across a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency130MHz
PackageSOT-223-4
Current Rating1A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi BCP56-16T1G technical specifications.
General
Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.57mm
hFE Min
25
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
80V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCP56-16T1G Datasheet
Download the complete datasheet for Onsemi BCP56-16T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
