NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. Features a DC current gain (hFE) range of 40 to 250 and a transition frequency of 130MHz. Packaged in a SOT-223-4 surface-mount case with tin, matte contact plating. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 1.5W.
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Onsemi BCP56T3G technical specifications.
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| Height | 0.146inch |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 0.263inch |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 35MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 80V |
| Width | 0.069inch |
| RoHS | Compliant |
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