NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. Features a DC current gain (hFE) range of 40 to 250 and a transition frequency of 130MHz. Packaged in a SOT-223-4 surface-mount case with tin, matte contact plating. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 1.5W.
Frequency130MHz
PackageSOT-223-4
Current Rating1A
PolarityNPN
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Technical Specifications
Onsemi BCP56T3G technical specifications.
General
Package/Case
SOT-223-4
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
0.146inch
hFE Min
25
Lead Free
Lead Free
Length
0.263inch
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
35MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
80V
Width
0.069inch
Compliance
RoHS
Compliant
Datasheet
Onsemi BCP56T3G Datasheet
Download the complete datasheet for Onsemi BCP56T3G to view detailed technical specifications.
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