PNP Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-223 package. Features a 20V collector-emitter breakdown voltage and a 1.5A maximum collector current. Offers a maximum power dissipation of 1W and a minimum hFE of 85. Operates across a temperature range of -55°C to 150°C. Compliant with RoHS standards.
PackageSOT-223
Current Rating1A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi BCP69 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1A
Emitter Base Voltage (VEBO)
-5V
Height
1.6mm
hFE Min
85
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
20V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-20V
Weight
0.188g
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BCP69 Datasheet
Download the complete datasheet for Onsemi BCP69 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.