NPN bipolar junction transistor in a SOT-23-3 package. Features a maximum collector-emitter voltage (VCEO) of 32V and a maximum collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum DC current gain (hFE) of 420. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Packaged on a 3000-piece tape and reel with tin, matte contact plating.
Onsemi BCW33LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 250mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.94mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 32V |
| Width | 1.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
