NPN bipolar junction transistor (BJT) in a SOT-23 surface mount package. Features a 32V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 180 and a transition frequency of 125MHz. Maximum power dissipation is 350mW, with a maximum operating temperature of 150°C.
Frequency125MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Onsemi BCW60B technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 550mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 550mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 180 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Transition Frequency | 125MHz |
| DC Rated Voltage | 32V |
| Weight | 0.03g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BCW60B Datasheet
Download the complete datasheet for Onsemi BCW60B to view detailed technical specifications.
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