PNP Bipolar Junction Transistor (BJT) in SOT-23-3 package, designed for high-frequency applications with a transition frequency of 100MHz. Features a maximum collector current of 800mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 120 and a maximum power dissipation of 300mW. Operates across a wide temperature range from -55°C to 150°C, with lead-free and RoHS compliant construction. Supplied on a 10000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
Power300mW
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Technical Specifications
Onsemi BCW68GLT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 1.5V |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.01mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 800mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BCW68GLT3G |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BCW68GLT3G Datasheet
Download the complete datasheet for Onsemi BCW68GLT3G to view detailed technical specifications.
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