NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a collector-emitter voltage (VCEO) of 45V, maximum collector current of 200mA, and a transition frequency (fT) of 125MHz. Offers a minimum DC current gain (hFE) of 250 and a maximum power dissipation of 350mW. Operates within a temperature range of -55°C to 150°C. RoHS compliant with tin, matte contact plating.
Frequency125MHz
PackageSOT-23
Voltage45V
Current Rating200mA
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Technical Specifications
Onsemi BCX70J technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
550mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
550mV
Contact Plating
Tin, Matte
Current Rating
200mA
Emitter Base Voltage (VEBO)
5V
Frequency
125MHz
Gain Bandwidth Product
125MHz
hFE Min
250
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
200mA
Max Frequency
125MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
125MHz
Voltage
45V
DC Rated Voltage
45V
Weight
0.002116oz
Compliance
RoHS
Compliant
Datasheet
Onsemi BCX70J Datasheet
Download the complete datasheet for Onsemi BCX70J to view detailed technical specifications.
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