The BCX71JLT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a maximum power dissipation of 350mW and is packaged in a SOT-23-3 surface mount package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C. It features a high current gain of 40 and a collector-emitter saturation voltage of 550mV.
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Onsemi BCX71JLT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -550mV |
| Collector-emitter Voltage-Max | 550mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
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