NPN Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Features a low collector-emitter saturation voltage of 500mV and a minimum DC current gain (hFE) of 40. Encased in a TO-126 package for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 1.25W.
Sign in to ask questions about the Onsemi BD13510STU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BD13510STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.2mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8.3mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Weight | 0.761g |
| Width | 3.45mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD13510STU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
