NPN Bipolar Junction Transistor (BJT) featuring a 1.5A maximum collector current and 45V collector-emitter breakdown voltage. This through-hole component offers a 500mV collector-emitter saturation voltage and a minimum hFE of 40. Housed in a TO-126 package, it operates within a temperature range of -55°C to 150°C with a power dissipation of 1.25W. This RoHS compliant, lead-free transistor is supplied in a rail/tube package.
Onsemi BD13516STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.2mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8.3mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Weight | 0.761g |
| Width | 3.45mm |
| RoHS | Compliant |
No datasheet is available for this part.
