
NPN Power Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Offers a low collector-emitter saturation voltage of 500mV and a minimum hFE of 25. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.25W. This RoHS compliant component is supplied in bulk packaging.
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| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.04mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BD135 |
| DC Rated Voltage | 45V |
| Width | 2.66mm |
| RoHS | Compliant |
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These are design resources that include the Onsemi BD135G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
