NPN Power Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Offers a low collector-emitter saturation voltage of 500mV and a minimum hFE of 25. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.25W. This RoHS compliant component is supplied in bulk packaging.
PackageTO-225-3
Current Rating1.5A
PolarityNPN
Power1.25W
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Technical Specifications
Onsemi BD135G technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Height
11.04mm
hFE Min
25
Lead Free
Lead Free
Length
7.74mm
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BD135
DC Rated Voltage
45V
Width
2.66mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BD135G Datasheet
Download the complete datasheet for Onsemi BD135G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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