NPN Power Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Offers a low collector-emitter saturation voltage of 500mV and a minimum hFE of 25. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.25W. This RoHS compliant component is supplied in bulk packaging.
PackageTO-225-3
Current Rating1.5A
PolarityNPN
Power1.25W
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Technical Specifications
Onsemi BD135G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.04mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BD135 |
| DC Rated Voltage | 45V |
| Width | 2.66mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD135G Datasheet
Download the complete datasheet for Onsemi BD135G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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