PNP Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 45V. Features a collector-base voltage (VCBO) of -45V and a collector-emitter breakdown voltage of 350V. This through-hole component is housed in a TO-126 package with tin, matte contact plating and a maximum power dissipation of 12.5W. Operating temperature range is -55°C to 150°C, with a minimum hFE of 40.
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Onsemi BD13616STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -45V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 11mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -45V |
| Weight | 0.761g |
| Width | 3.25mm |
| RoHS | Compliant |
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