
NPN power bipolar junction transistor in TO-126 package, featuring a 60V collector-emitter breakdown voltage and a 1.5A maximum collector current. This through-hole mounted component offers a 500mV collector-emitter saturation voltage and a minimum hFE of 40. With a maximum power dissipation of 12.5W and an operating temperature range of -55°C to 150°C, it is RoHS compliant and lead-free.
Onsemi BD13710STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 60V |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | BD137 |
| DC Rated Voltage | 60V |
| Weight | 0.761g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD13710STU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
