NPN Power Bipolar Junction Transistor (BJT) in TO-126 package, designed for through-hole mounting. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1.25W. Operates across a temperature range of -55°C to 150°C, with a transition frequency of 50MHz. Compliant with RoHS standards.
PackageTO-126
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD13716S technical specifications.
General
Package/Case
TO-126
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
60V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Through Hole
Number of Elements
1
Package Quantity
250
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.25W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
50MHz
DC Rated Voltage
60V
Weight
0.761g
Compliance
RoHS
Compliant
Datasheet
Onsemi BD13716S Datasheet
Download the complete datasheet for Onsemi BD13716S to view detailed technical specifications.
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