NPN Power Bipolar Junction Transistor (BJT) in TO-126 package, designed for through-hole mounting. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 40 and a maximum power dissipation of 1.25W. Operates across a temperature range of -55°C to 150°C, with a transition frequency of 50MHz. Compliant with RoHS standards.
PackageTO-126
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD13716S technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 250 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 60V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD13716S Datasheet
Download the complete datasheet for Onsemi BD13716S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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