NPN Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Features a TO-126 package for through-hole mounting, a maximum power dissipation of 12.5W, and a minimum hFE of 40. Operates across a wide temperature range from -55°C to 150°C, with tin matte contact plating and RoHS compliance.
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Onsemi BD13910STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.2mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8.3mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| Width | 3.45mm |
| RoHS | Compliant |
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