NPN Power Bipolar Junction Transistor (BJT) in TO-126 package. Features 80V collector-emitter breakdown voltage, 1.5A maximum collector current, and 1.25W power dissipation. Offers a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of 500mV. Operates within a temperature range of -55°C to 150°C. Through-hole mounting with tin, matte contact plating. RoHS compliant.
PackageTO-126
Current Rating1.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BD13916STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current Rating | 1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BD13916STU Datasheet
Download the complete datasheet for Onsemi BD13916STU to view detailed technical specifications.
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