
PNP Bipolar Junction Transistor (BJT) with 80V Collector-Emitter Voltage (VCEO) and 1.5A Max Collector Current. Features a TO-126 package for through-hole mounting, offering a minimum DC current gain (hFE) of 40. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1.25W. Compliant with RoHS standards.
Onsemi BD14016STU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current | 15A |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Voltage | 45V |
| DC Rated Voltage | -80V |
| Weight | 0.026843oz |
| Width | 3.25mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BD14016STU to view detailed technical specifications.
No datasheet is available for this part.
